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Биполярный транзистор BC328-40 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC328-40

Тип материала: Si

Полярность: PNP

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Максимальная рассеиваемая мощность (Pc): 0.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.8
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 60
MHz

Ёмкость коллекторного перехода (Cc): 18
pf

 Светодиодная лента  Офисные Светильники

Статический коэффициент передачи тока (hfe): 250

Корпус транзистора: TO92

BC328-40
Datasheet (PDF)

 Офисные Светильники

4.1. bc327-16bk-25bk-40bk bc328-16bk-25bk-40bk.pdf Size:88K _update

BC327-xBK / BC328-xBK
BC327-xBK / BC328-xBK
General Purpose Si-Epitaxial Planar Transistors
PNP PNP
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2010-06-23
±0.1 Power dissipation 625 mW
4.6
Verlustleistung
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
C B E
Gehäusematerial UL9

5.1. bc327 bc328.pdf Size:160K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC327/D
Amplifier Transistors
PNP Silicon
BC327,-16,-25
BC328,-16,-25
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol BC327 BC328 Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 45 25 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 50 30 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collect

5.2. bc327 bc328.pdf Size:49K _fairchild_semi

BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327 -50 V
: BC328 -30 V
VCEO Collector-Emitter Voltage
:

5.3. bc327 bc328 to-92.pdf Size:384K _mcc

BC327-16/25/40
MCC
TM
Micro Commercial Components
BC328-16/25/40
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP
Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Plastic-Encapsulate
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8

5.4. sbc328.pdf Size:85K _auk

SBC328
Semiconductor
Semiconductor
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary pair with SBC338
Ordering Information
Type NO. Marking Package Code
SBC328 SBC328 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.

5.5. bc327~bc328.pdf Size:293K _secos

BC327 / BC328
PNP Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
G H
Power Dissipation
1Collector
1
1
1
J
2Base
2
2
2
CLASSIFICATION OF hFE (1)
3
A D 3Emitter
3
3
Product-Rank BC327-16 BC327-25 BC327-40
B
Millimeter
REF.
Min. Max.
Product-Rank BC328-16 BC32

5.6. bc327 bc328 bc337 bc338.pdf Size:117K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BC327/A BC328 PNP
SILICON PLANAR EPITAXIAL TRANSISTORS
BC337/A BC338 NPN
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with «T»
E
B
C
General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25?C)
DE

5.7. bc328.pdf Size:335K _kec

SEMICONDUCTOR BC328
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
High Current : IC=-800mA.
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).
N DIM MILLIMETERS
For Complementary with NPN type BC338.
A 4.70 MAX
E
K
G B 4.80 MAX
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 )
H 0.45
_
H J

5.8. bc327 bc328.pdf Size:471K _wietron

BC327/BC328
PNP General Purpose Transistor
COLLECTOR
1
P b Lead(Pb)-Free
TO-92
2
BASE
1
3 2
3
EMITTER
Maximum Ratings(TA=25°C unless otherwise noted)
Rating Symbol BC327 BC328 Unit
VCBO
Collector-Base voltage
-50 -30 V
VCEO
V
Collector-Emitter voltage -45 -25
VEBO
V
Emitter-Base voltage
-5.0 -5.0
Collector Current Continuous lC
mA
800
Total Device Dissipation
PD
625 m

Другие транзисторы… BC327CP
, BC327L
, BC327P
, BC328
, BC328-01
, BC328-10
, BC328-16
, BC328-25
, , BC328AP
, BC328BP
, BC328CP
, BC328L
, BC328P
, BC329
, BC329B
, BC329C
.

BC328-40 Datasheet PDF

4.1. bc327-16bk-25bk-40bk bc328-16bk-25bk-40bk.pdf Size:88K _update

BC327-xBK / BC328-xBK
BC327-xBK / BC328-xBK
General Purpose Si-Epitaxial Planar Transistors
PNP PNP
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2010-06-23
±0.1 Power dissipation 625 mW
4.6
Verlustleistung
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
C B E
Gehäusematerial UL9

5.1. bc327 bc328.pdf Size:160K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC327/D
Amplifier Transistors
PNP Silicon
BC327,-16,-25
BC328,-16,-25
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol BC327 BC328 Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 45 25 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 50 30 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collect

5.2. bc327 bc328.pdf Size:49K _fairchild_semi

BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327 -50 V
: BC328 -30 V
VCEO Collector-Emitter Voltage
:

5.3. bc327 bc328 to-92.pdf Size:384K _mcc

BC327-16/25/40
MCC
TM
Micro Commercial Components
BC328-16/25/40
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP
Lead Free Finish/RoHS Compliant («P» Suffix designates
RoHS Compliant. See ordering information)
Plastic-Encapsulate
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8

5.4. sbc328.pdf Size:85K _auk

SBC328
Semiconductor
Semiconductor
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary pair with SBC338
Ordering Information
Type NO. Marking Package Code
SBC328 SBC328 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.

5.5. bc327~bc328.pdf Size:293K _secos

BC327 / BC328
PNP Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
G H
Power Dissipation
1Collector
1
1
1
J
2Base
2
2
2
CLASSIFICATION OF hFE (1)
3
A D 3Emitter
3
3
Product-Rank BC327-16 BC327-25 BC327-40
B
Millimeter
REF.
Min. Max.
Product-Rank BC328-16 BC32

5.6. bc327 bc328 bc337 bc338.pdf Size:117K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BC327/A BC328 PNP
SILICON PLANAR EPITAXIAL TRANSISTORS
BC337/A BC338 NPN
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with «T»
E
B
C
General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25?C)
DE

5.7. bc328.pdf Size:335K _kec

SEMICONDUCTOR BC328
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
High Current : IC=-800mA.
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).
N DIM MILLIMETERS
For Complementary with NPN type BC338.
A 4.70 MAX
E
K
G B 4.80 MAX
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 )
H 0.45
_
H J

5.8. bc327 bc328.pdf Size:471K _wietron

BC327/BC328
PNP General Purpose Transistor
COLLECTOR
1
P b Lead(Pb)-Free
TO-92
2
BASE
1
3 2
3
EMITTER
Maximum Ratings(TA=25°C unless otherwise noted)
Rating Symbol BC327 BC328 Unit
VCBO
Collector-Base voltage
-50 -30 V
VCEO
V
Collector-Emitter voltage -45 -25
VEBO
V
Emitter-Base voltage
-5.0 -5.0
Collector Current Continuous lC
mA
800
Total Device Dissipation
PD
625 m

SSM3J328R Datasheet PDF

1.1. ssm3j328r 101111.pdf Size:209K _toshiba

SSM3J328R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?)
SSM3J328R
0 Power Management Switch Applications
Unit: mm
+0.08
• 1.5-V drive
0.42
+0.08
-0.05
0.17
0.05?M A -0.07
• Low ON-resistance: RDS(ON) = 88.4m? (max) (@VGS = -1.5 V)
3
RDS(ON) = 56.0m? (max) (@VGS = -1.8 V)
RDS(ON) = 39.7m? (max) (@VGS = -2.5 V)
RDS(ON) = 29.8m? (max) (@VGS = -4.5

3.1. ssm3j326t 101111.pdf Size:206K _toshiba

SSM3J326T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?)
SSM3J326T
0 Power Management Switch Applications
Unit: mm
• 1.8-V drive
+0.2
• Low ON-resistance: RDS(ON) = 115 m? (max) (@VGS = -1.8 V)
2.8-0.3
RDS(ON) = 62.5 m? (max) (@VGS = -2.5 V)
+0.2
RDS(ON) = 45.7 m? (max) (@VGS = -4.5 V)
1.6-0.1
RDS(ON) = 39.3 m? (max) (@VGS = -10 V)
1
Absolute Ma

3.2. ssm3j327r 101111.pdf Size:206K _toshiba

SSM3J327R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?)
SSM3J327R
0 Power Management Switch Applications
Unit: mm
+0.08
0.42
+0.08
-0.05
0.17
• 1.5-V drive 0.05?M A -0.07
3
• Low ON-resistance: RDS(ON) = 240 m? (max) (@VGS = -1.5 V)
RDS(ON) = 168 m? (max) (@VGS = -1.8 V)
RDS(ON) = 123 m? (max) (@VGS = -2.5 V)
RDS(ON) = 93 m? (max) (@VGS = -4.5 V)

3.3. ssm3j325f 101111.pdf Size:187K _toshiba

SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?)
SSM3J325F
0 Power Management Switch Applications
Unit: mm
+0.5
• 1.5-V drive 2.5-0.3
+0.25
• Low ON-resistance: RDS(ON) = 311 m? (max) (@VGS = -1.5 V)
1.5-0.15
RDS(ON) = 231 m? (max) (@VGS = -1.8 V)
RDS(ON) = 179 m? (max) (@VGS = -2.5 V)
1
RDS(ON) = 150 m? (max) (@VGS = -4.5 V)
2 3
Absolute

3.4. ssm3j321t 081020.pdf Size:207K _toshiba

SSM3J321T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM3J321T
0 Power Management Switch Applications
0 High-Speed Switching Applications
• 1.5V drive
Unit: mm
• Low ON-resistance: Ron = 137m? (max) (@VGS = -1.5 V)
+0.2
Ron = 88m? (max) (@VGS = -1.8 V)
2.8-0.3
Ron = 62m? (max) (@VGS = -2.5 V)
+0.2
1.6-0.1
Ron = 46m? (max) (@VGS = -4.5 V)
1

3.5. ssm3j327f 101111.pdf Size:185K _toshiba

SSM3J327F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?)
SSM3J327F
0 Power Management Switch Applications
Unit: mm
+0.5
• 1.5-V drive 2.5-0.3
+0.25
• Low ON-resistance: RDS(ON) = 242 m? (max) (@VGS = -1.5 V)
1.5-0.15
RDS(ON) = 170 m? (max) (@VGS = -1.8 V)
RDS(ON) = 125 m? (max) (@VGS = -2.5 V)
1
RDS(ON) = 95 m? (max) (@VGS = -4.5 V)
2 3
Absolute

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