K3296-S Даташит — NEC Renesas TechnologyВ связи с паспорте перечисляет K3296-S

2SK3296 Datasheet PDF

1.1. 2sk3296.pdf Size:422K _toshiba

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
PART NUMBER PACKAGE
low on-state resistance and excellent switching characteristics,
2SK3296 TO-220AB
designed for low voltage high current applications such as
2SK3296-S TO-262
DC/DC converter wit

4.1. 2sk3299-s-zj.pdf Size:81K _update

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
PART NUMBER PACKAGE
a low gate charge and excellent switching characteristics,
2SK3299 TO-220AB
designed for high voltage applications such as switching power
2SK3299-S TO-262
supply, AC adapter.
2S

4.2. 2sk3298.pdf Size:226K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.3. 2sk3298b.pdf Size:291K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3295.pdf Size:42K _update

SMD Type IC
SMD Type Transistors
MOS Field Effect Transistor
2SK3295
TO-263
Unit: mm
Features
+0.2
4.5 V drive available 4.57-0.2
1.27+0.1
-0.1
Low on-state resistance
RDS(on)1 =18 mÙMAX. (VGS =10V, ID =18A)
Low gate charge
QG =16nCTYP. (ID =35A, VDD =16V, VGS =10V)
0.1max
1.27+0.1
-0.1
Built-in gate protection diode
+0.1
Surface mount device available 0.81-0.1
2.54
1Gate

4.5. 2sk3294.pdf Size:46K _update

 Светодиодная лента  Офисные Светильники

SMD Type MOSFET
MOS Field Effect Transistor
2SK3294
TO-263
Unit: mm
Features +0.2
4.57-0.2
+0.1
1.27-0.1
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 160 m MAX. (VGS =10V, ID =10A)
+0.1
0.1max
1.27-0.1
Low input capacitance
Ciss =1500pFTYP. (VDS =10 V, VGS =0 V)
+0.1
0.81-0.1
2.54
Avalanche capability rated
1Gate
+0.2
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2
Bu

4.6. 2sk3291.pdf Size:34K _sanyo

Ordering number:ENN6413
N-Channel Silicon MOSFET
2SK3291
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.7. 2sk3293.pdf Size:42K _sanyo

Ordering number:ENN6345
N-Channel Silicon MOSFET
2SK3293
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.8. 2sk3292.pdf Size:33K _sanyo

Ordering number:ENN6414
N-Channel Silicon MOSFET
2SK3292
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.9. 2sk3290.pdf Size:42K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

K3296 Datasheet PDF — NEC

 Офисные Светильники
Part Number K3296
Description 2SK3296
Manufacturers NEC
Logo
Preview ( 8 pages )

		
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES

• 4.5 V drive available


• Low on-state resistance


RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)


• Low gate charge


QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)


• Built-in gate protection diode


• Surface mount device available

ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
2SK3296-ZK
2SK3296-ZJ
TO-262
TO-263(MP-25ZK)
TO-263(MP-25ZJ)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)


Drain to Source Voltage (VGS = 0 V)


Gate to Source Voltage (VDS = 0 V)


VDSS


VGSS


Drain Current (DC) (TC = 25°C)


Drain Current (Pulse) Note


ID(DC)


ID(pulse)


Total Power Dissipation (TA = 25°C) PT1


Total Power Dissipation (TC = 25°C) PT2

20

±20


±35


±140

1.5
40
Channel Temperature
Storage Temperature

Tch 150


Tstg −55 to +150


Note PW ≤ 10 µs, Duty Cycle ≤ 1%

V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14063EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan

The mark shows major revised points.


1999, 2000
No Preview Available !

1 pagewww.DataSheet4U.com
2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20

0 20 40 60 80 100 120 140 160

Tch — Channel Temperature — ˚C

FORWARD BIAS SAFE OPERATING AREA

1000
100
10

RD(S@(onV) LGiSm=ite1IdD0V(D)C)

ID(pulse)

100

300 s

PW =

s

10µs

Power Dissipa1tiom3nmsL1smimsited

TC = 25°C

1 Single Pulse

0.1
1
DC
10

VDS — Drain to Source Voltage — V

100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10

0 20 40 60 80 100 120 140 160

TC — Case Temperature — ˚C

1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1

Rth(ch-A) = 83.3˚C/W

Rth(ch-C) = 3.13˚C/W

0.1
0.01

10µ

100 µ 1 m

10 m 100 m
1
PW — Pulse Width — sec
Single Pulse
10 100 1000
Data Sheet D14063EJ2V0DS
5
5 Page

Information Total 8 Pages
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Part Number Description Manufacturers
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K3296 The function is 2SK3296. NEC
K3298 The function is 2SK3298. NEC
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2SK4213 Datasheet PDF

1.1. 2sk4213-zk 2sk4213a-zk.pdf Size:152K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 6.0 mΩ M

1.2. 2sk4213.pdf Size:153K _nec

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 6.0 mΩ M

4.1. 2sk4212a-zk.pdf Size:146K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4212
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.8 mΩ M

4.2. 2sk4212-zk.pdf Size:146K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4212
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 7.8 mΩ M

4.3. 2sk4210.pdf Size:497K _sanyo

2SK4210
Ordering number : ENA1517
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4210
Applications
Features
Low ON-resistance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
Specifications
at Ta=25C
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Drain-to-So

4.4. 2sk4212.pdf Size:252K _renesas

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Re

2SK4108 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK4108

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 20
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 70
nC

Время нарастания (tr): 70
ns

Выходная емкость (Cd): 320
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.27
Ohm

Тип корпуса: TO3P

2SK4108
Datasheet (PDF)

1.1. 2sk4108.pdf Size:281K _toshiba

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Max

4.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absol

4.2. 2sk4105.pdf Size:199K _toshiba

2SK4105
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4105
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Abso

4.3. 2sk4107.pdf Size:239K _toshiba

2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.4. 2sk4104.pdf Size:206K _toshiba

2SK4104
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4104
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute M

4.5. 2sk4103.pdf Size:296K _toshiba

2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4103
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximu

4.6. 2sk4100ls.pdf Size:97K _sanyo

www.DataSheet4U.com
Ordering number : ENA0778 2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4100LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

Ordering number : ENA0745 2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4101LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
High breakdown voltage
You can decrease handling current.
Included gate protection diode
No secondarybreakdown
Wide area of safe operation
Simple bias circuitry
No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 180 V

Другие MOSFET… 2SK4020
, 2SK4021
, 2SK4022
, 2SK4103
, 2SK4104
, 2SK4105
, 2SK4106
, 2SK4107
, J111
, 2SK4110
, 2SK4111
, 2SK4112
, 2SK4113
, 2SK4114
, TJ120F06J3
, TK07H90A
, TK09H90A
.

K4108 Datasheet PDF — Toshiba Semiconductor

Part Number K4108
Description 2SK4108
Manufacturers Toshiba Semiconductor
Logo
Preview ( 6 pages )

		
2SK4108

www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

2SK4108
Switching Regulator Applications
Unit: mm

z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)


z High forward transfer admittance : |Yfs| = 14 S (typ.)


z Low leakage current


: IDSS = 100 μA (max) (VDS = 500 V)


z Enhancement mode


: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

Characteristic
Symbol
Rating
Unit

Drain−source voltage


VDSS 500 V


Drain−gate voltage (RGS = 20 kΩ)


VDGR

500
V

Gate−source voltage


VGSS ±30 V

Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)

ID


IDP


PD


EAS

20 A
80 A
150 W
960 mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range

IAR


EAR


Tch


Tstg

20
15
150

−55~150

A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1B

Note: Using continuously under heavy loads (e.g. the application of high

Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient

Rth (ch−c)


Rth (ch−a)

0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-06-29
No Preview Available !

1 pagewww.DataSheet4U.com
2SK4108
SAFE OPERATING AREA
1000

100 ID max (pulse) *

ID max (continuous)
10 DC OPEATION

Tc = 25°C

1

1 ms *

100 μs *

0.1 ※ Single pulse Ta=25℃

Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100

Drain-source voltage VDS (V)

1000
1000
800
600
400

EAS – Tch

200

25 50 75 100 125 150

Channel temperature (initial) Tch (°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

Test circuit

RG = 25 Ω

VDD = 90 V, L = 4.08 mH

Wave form

ΕAS

=
1
2

L

⋅I2


⎜⎜⎝⎛
BVDSS

BVDSS − VDD

⎟⎟⎠⎞
5 2007-06-29
5 Page

Information Total 6 Pages
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Part Number Description Manufacturers
K4100LS The function is 2SK4100LS. Sanyo Semicon Device
K4101LS The function is 2SK4101LS. Sanyo
K4106 The function is 2SK4106. Toshiba
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2SK4108 Datasheet PDF

1.1. 2sk4108.pdf Size:281K _toshiba

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Max

4.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absol

4.2. 2sk4105.pdf Size:199K _toshiba

2SK4105
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4105
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Abso

4.3. 2sk4107.pdf Size:239K _toshiba

2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.4. 2sk4104.pdf Size:206K _toshiba

2SK4104
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4104
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute M

4.5. 2sk4103.pdf Size:296K _toshiba

2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4103
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximu

4.6. 2sk4100ls.pdf Size:97K _sanyo

www.DataSheet4U.com
Ordering number : ENA0778 2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4100LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

Ordering number : ENA0745 2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4101LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
High breakdown voltage
You can decrease handling current.
Included gate protection diode
No secondarybreakdown
Wide area of safe operation
Simple bias circuitry
No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 180 V

K30N60HS Datasheet PDF — Infineon

Part Number K30N60HS
Description SKW30N60HS
Manufacturers Infineon
Logo
Preview ( 14 pages )

		
SKW30N60HS
High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation


• Short circuit withstand time – 10 µs


• Designed for operation above 30 kHz


• NPT-Technology for 600V applications offers:

- parallel switching capability

- moderate Eoff increase with temperature

- very tight parameter distribution

• High ruggedness, temperature stable behaviour


• Pb-free lead plating; RoHS compliant


• Qualified according to JEDEC1 for target applications


• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C
G
E
PG-TO-247-3
Type

VCE


IC


Eoff Tj Marking

Package
SKW30N60HS

600V 30 480µJ 150°C K30N60HS PG-TO-247-3

Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current

TC = 25°C


TC = 100°C


Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Diode forward current

TC = 25°C


TC = 100°C


Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage static

transient (tpD


Short circuit withstand time2)


VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Time limited operating junction temperature for t 

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE


IC


ICpuls

-

IF


IFpuls


VGE


tSC


Ptot


Tj ,


Tstg


Tj(tl)

-
600
41
30
112
112
41
28
112

±20


±30

10
250
-55...+150
175
260
Unit
V
A
V

µs

W

°C


1 J-STD-020 and JESD-022


2) Allowed number of short circuits: 1s.

Power Semiconductors
1
Rev. 2.2 Sep 08
No Preview Available !

1 pageSKW30N60HS
100A
80A

TC=80°C

60A TC=110°C

40A Ic

20A Ic

0A
10Hz
100Hz
1kHz
10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of
switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 11Ω)

100A
10A
1A

tP=4µs

15µs
50µs
200µs
1ms
DC
0.1A
1V
10V
100V
1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C;

VGE=15V)

200W
150W
100W
Limited by Bond wire
40A
30A
20A
50W
10A
0W
25°C
50°C
75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of
case temperature

(Tj ≤ 150°C)

0A
25°C
Figure 4.
75°C
125°C

TC, CASE TEMPERATURE

Collector current as a function of
case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors
5
Rev. 2.2 Sep 08
5 Page

Information Total 14 Pages
Download

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2SK3296 Datasheet PDF

1.1. 2sk3296.pdf Size:422K _toshiba

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
PART NUMBER PACKAGE
low on-state resistance and excellent switching characteristics,
2SK3296 TO-220AB
designed for low voltage high current applications such as
2SK3296-S TO-262
DC/DC converter wit

4.1. 2sk3299-s-zj.pdf Size:81K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
PART NUMBER PACKAGE
a low gate charge and excellent switching characteristics,
2SK3299 TO-220AB
designed for high voltage applications such as switching power
2SK3299-S TO-262
supply, AC adapter.
2S

4.2. 2sk3298.pdf Size:226K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.3. 2sk3298b.pdf Size:291K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3295.pdf Size:42K _update

SMD Type IC
SMD Type Transistors
MOS Field Effect Transistor
2SK3295
TO-263
Unit: mm
Features
+0.2
4.5 V drive available 4.57-0.2
1.27+0.1
-0.1
Low on-state resistance
RDS(on)1 =18 mÙMAX. (VGS =10V, ID =18A)
Low gate charge
QG =16nCTYP. (ID =35A, VDD =16V, VGS =10V)
0.1max
1.27+0.1
-0.1
Built-in gate protection diode
+0.1
Surface mount device available 0.81-0.1
2.54
1Gate

4.5. 2sk3294.pdf Size:46K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3294
TO-263
Unit: mm
Features +0.2
4.57-0.2
+0.1
1.27-0.1
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 160 m MAX. (VGS =10V, ID =10A)
+0.1
0.1max
1.27-0.1
Low input capacitance
Ciss =1500pFTYP. (VDS =10 V, VGS =0 V)
+0.1
0.81-0.1
2.54
Avalanche capability rated
1Gate
+0.2
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2
Bu

4.6. 2sk3291.pdf Size:34K _sanyo

Ordering number:ENN6413
N-Channel Silicon MOSFET
2SK3291
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.7. 2sk3293.pdf Size:42K _sanyo

Ordering number:ENN6345
N-Channel Silicon MOSFET
2SK3293
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.8. 2sk3292.pdf Size:33K _sanyo

Ordering number:ENN6414
N-Channel Silicon MOSFET
2SK3292
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2062A
4V drive.

4.5
1.5
1.6
0.4 0.5
3 2 1
0.4
1.5
3.0
1 : Gate
0.75
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25?C
Paramete

4.9. 2sk3290.pdf Size:42K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

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