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IRLR024N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLR024N

Тип транзистора: MOSFET

Полярность: N

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Максимальная рассеиваемая мощность (Pd): 38
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 16
V

Пороговое напряжение включения Ugs(th): 2
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 10
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.065
Ohm

 Светодиодная лента  Офисные Светильники

Тип корпуса: TO252AA

IRLR024N
Datasheet (PDF)

 Офисные Светильники

1.1. irlr024n.pdf Size:162K _international_rectifier

PD- 91363E
IRLR024N
IRLU024N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Surface Mount (IRLR024N) VDSS = 55V
Straight Lead (IRLU024N)
Advanced Process Technology
RDS(on) = 0.065?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possi

1.2. irlr024npbf irlu024npbf.pdf Size:308K _international_rectifier

PD- 95081A
IRLR024NPbF
IRLU024NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
D
l Surface Mount (IRLR024N) VDSS = 55V
l Straight Lead (IRLU024N)
l Advanced Process Technology
RDS(on) = 0.065Ω
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
S
l Lead-Free
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techni

3.1. irlr024zpbf irlu024zpbf.pdf Size:334K _international_rectifier

PD — 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET Power MOSFET
Features
n Logic Level
D
n Advanced Process Technology
VDSS = 55V
n Ultra Low On-Resistance
n 175°C Operating Temperature
RDS(on) = 58mΩ
n Fast Switching
G
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free ID = 16A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve ext

3.2. irlr024.pdf Size:168K _international_rectifier

3.3. irlr024pbf irlu024pbf.pdf Size:744K _international_rectifier

PD- 96091
IRLR024PbF
IRLU024PbF
HEXFET Power MOSFET
Lead-Free
Description
Absolute Maximum Ratings
08/01/06
Document Number: 91322 www.vishay.com
1
IRLR/U024PbF
Document Number: 91322 www.vishay.com
2
IRLR/U024PbF
Document Number: 91322 www.vishay.com
3
IRLR/U024PbF
Document Number: 91322 www.vishay.com
4
IRLR/U024PbF
Document Number: 91322 www.vishay.com
5
IRLR/U024P

3.4. irlr024a.pdf Size:220K _samsung

IRLR/U024A
Advanced Power MOSFET
FEATURES
BVDSS = 60 V
Avalanche Rugged Technology
RDS(on) = 0.075 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 15 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK I-PAK
Lower Leakage Current : 10 A (Max.) @ VDS = 60V
Lower RDS(ON) : 0.061 ? (Typ.) 2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
S

3.5. irlr024 irlu024 sihlr024 sihlu024.pdf Size:1198K _vishay

IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 60
Available
Surface Mount (IRLR024/SiHLR024)
RDS(on) (?)VGS = 5.0 V 0.10
RoHS*
Straight Lead (IRLU024/SiHLU024)
Qg (Max.) (nC) 18
COMPLIANT
Available in Tape and Reel
Qgs (nC) 4.5
Qgd (nC) 12 Logic-Level Gate Drive
Configuration Single
RDS(on) Spe

Другие MOSFET… IRLMS6702
, IRLMS6802
, IRLR010
, IRLR014
, IRLR014A
, IRLR020
, IRLR024
, IRLR024A
, IRFB4227
, IRLR110A
, IRLR120A
, IRLR120N
, IRLR130A
, IRLR210A
, IRLR220A
, IRLR230A
, IRLR2703
.

IRLR024 Datasheet PDF

1.1. irlr024n.pdf Size:162K _international_rectifier

PD- 91363E
IRLR024N
IRLU024N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Surface Mount (IRLR024N) VDSS = 55V
Straight Lead (IRLU024N)
Advanced Process Technology
RDS(on) = 0.065?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possi

1.2. irlr024npbf irlu024npbf.pdf Size:308K _international_rectifier

PD- 95081A
IRLR024NPbF
IRLU024NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
D
l Surface Mount (IRLR024N) VDSS = 55V
l Straight Lead (IRLU024N)
l Advanced Process Technology
RDS(on) = 0.065Ω
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
S
l Lead-Free
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techni

1.3. irlr024zpbf irlu024zpbf.pdf Size:334K _international_rectifier

PD — 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET Power MOSFET
Features
n Logic Level
D
n Advanced Process Technology
VDSS = 55V
n Ultra Low On-Resistance
n 175°C Operating Temperature
RDS(on) = 58mΩ
n Fast Switching
G
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free ID = 16A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve ext

1.4. irlr024.pdf Size:168K _international_rectifier

1.5. irlr024pbf irlu024pbf.pdf Size:744K _international_rectifier

PD- 96091
IRLR024PbF
IRLU024PbF
HEXFET Power MOSFET
Lead-Free
Description
Absolute Maximum Ratings
08/01/06
Document Number: 91322 www.vishay.com
1
IRLR/U024PbF
Document Number: 91322 www.vishay.com
2
IRLR/U024PbF
Document Number: 91322 www.vishay.com
3
IRLR/U024PbF
Document Number: 91322 www.vishay.com
4
IRLR/U024PbF
Document Number: 91322 www.vishay.com
5
IRLR/U024P

1.6. irlr024a.pdf Size:220K _samsung

IRLR/U024A
Advanced Power MOSFET
FEATURES
BVDSS = 60 V
Avalanche Rugged Technology
RDS(on) = 0.075 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 15 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK I-PAK
Lower Leakage Current : 10 A (Max.) @ VDS = 60V
Lower RDS(ON) : 0.061 ? (Typ.) 2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
S

1.7. irlr024 irlu024 sihlr024 sihlu024.pdf Size:1198K _vishay

IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 60
Available
Surface Mount (IRLR024/SiHLR024)
RDS(on) (?)VGS = 5.0 V 0.10
RoHS*
Straight Lead (IRLU024/SiHLU024)
Qg (Max.) (nC) 18
COMPLIANT
Available in Tape and Reel
Qgs (nC) 4.5
Qgd (nC) 12 Logic-Level Gate Drive
Configuration Single
RDS(on) Spe

IRLR024N Datasheet PDF

1.1. irlr024n.pdf Size:162K _international_rectifier

PD- 91363E
IRLR024N
IRLU024N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Surface Mount (IRLR024N) VDSS = 55V
Straight Lead (IRLU024N)
Advanced Process Technology
RDS(on) = 0.065?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possi

1.2. irlr024npbf irlu024npbf.pdf Size:308K _international_rectifier

PD- 95081A
IRLR024NPbF
IRLU024NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
D
l Surface Mount (IRLR024N) VDSS = 55V
l Straight Lead (IRLU024N)
l Advanced Process Technology
RDS(on) = 0.065Ω
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
S
l Lead-Free
Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techni

3.1. irlr024zpbf irlu024zpbf.pdf Size:334K _international_rectifier

PD — 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET Power MOSFET
Features
n Logic Level
D
n Advanced Process Technology
VDSS = 55V
n Ultra Low On-Resistance
n 175°C Operating Temperature
RDS(on) = 58mΩ
n Fast Switching
G
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free ID = 16A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve ext

3.2. irlr024.pdf Size:168K _international_rectifier

3.3. irlr024pbf irlu024pbf.pdf Size:744K _international_rectifier

PD- 96091
IRLR024PbF
IRLU024PbF
HEXFET Power MOSFET
Lead-Free
Description
Absolute Maximum Ratings
08/01/06
Document Number: 91322 www.vishay.com
1
IRLR/U024PbF
Document Number: 91322 www.vishay.com
2
IRLR/U024PbF
Document Number: 91322 www.vishay.com
3
IRLR/U024PbF
Document Number: 91322 www.vishay.com
4
IRLR/U024PbF
Document Number: 91322 www.vishay.com
5
IRLR/U024P

3.4. irlr024a.pdf Size:220K _samsung

IRLR/U024A
Advanced Power MOSFET
FEATURES
BVDSS = 60 V
Avalanche Rugged Technology
RDS(on) = 0.075 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 15 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK I-PAK
Lower Leakage Current : 10 A (Max.) @ VDS = 60V
Lower RDS(ON) : 0.061 ? (Typ.) 2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
S

3.5. irlr024 irlu024 sihlr024 sihlu024.pdf Size:1198K _vishay

IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 60
Available
Surface Mount (IRLR024/SiHLR024)
RDS(on) (?)VGS = 5.0 V 0.10
RoHS*
Straight Lead (IRLU024/SiHLU024)
Qg (Max.) (nC) 18
COMPLIANT
Available in Tape and Reel
Qgs (nC) 4.5
Qgd (nC) 12 Logic-Level Gate Drive
Configuration Single
RDS(on) Spe

9N50C Datasheet PDF — Fairchild Semiconductor

Part Number 9N50C
Description FQI9N50C
Manufacturers Fairchild Semiconductor
Logo
Preview ( 9 pages )

		
FQB9N50C/FQI9N50C
500V N-Channel MOSFET

QFET TM

General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features

• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS

D2-PAK

FQB Series
GDS

I2-PAK

FQI Series
D
!
"
!"

G!

"
"
!
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS


ID

www.DataSheet4U.com

IDM


VGSS


EAS


IAR


EAR

dv/dt

PD


TJ, TSTG


TL

Parameter
Drain-Source Voltage
Drain Current

- Continuous (TC = 25°C)


- Continuous (TC = 100°C)

Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics
Symbol

RθJC


RθJA


RθJA

Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB9N50C/FQI9N50C
500
9
5.4
36

± 30

360
9
13.5
4.5
135
1.07
-55 to +150
300
Typ Max
-- 0.93
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units

°CW


°CW


°CW

2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
No Preview Available !

1 pageGate Charge Test Circuit & Waveform
Same Type

50KΩ

as DUT
12V 200nF
300nF

VGS

10V

Qg

VGS

VDS

Qgs Qgd

DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
www.DataSheet4U.com

VDS

VGS

RG

RL

VDD

DUT

VDS

90%

VGS 10%

td(on)

tr

t on

td(off)

tf

t off

Unclamped Inductive Switching Test Circuit & Waveforms

VDS

ID

RG

L

EAS

=
—1—
2

L IAS2

BVDSS

———————

BVDSS — VDD

BVDSS

IAS

VDD ID (t)

10V

tp

DUT

VDD VDS (t)

t p Time

2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
5 Page

Information Total 9 Pages
Download

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Featured Datasheets

Part Number Description Manufacturers
9N50 The function is N-CHANNEL POWER MOSFET. UTC
9N50 The function is N-Channel MOSFET Transistor. Inchange Semiconductor
9N50C The function is FQI9N50C. Fairchild Semiconductor
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